1 elm34801aa - n 4 - g e neral description f eatures maximum a bsolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction - to - a mbient steady-state r ja 62.5 c /w parameter symbol limit unit note drain - s ource voltage vds -3 0 v gate - s ource v oltag e vgs 20 v conti nuous drain current t a = 25 c id -6 a t a = 70 c -5 pulsed d rain current idm -30 a 3 power dissipation t c = 25 c pd 2.5 w t c = 70 c 1.3 j unction and storage temperature range tj , tstg - 55 to 150 c elm34801aa - n uses advanced trench technology to provide excellent r ds(on) , low gate charge and low gate resistance. ? vds =- 3 0v ? id =- 6 a ? rds (on) < 5 0 m (vgs =- 10 v) ? rds (on) < 80 m (vgs =-4. 5v) dual p-channel mosfet s 1 g1 d1 s 2 g2 d2 pin configuration c ircuit so p - 8 (top vi ew) pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 t a = 25 c . u nless otherwise noted. 4 3 2 1 5 6 7 8
2 elm34801aa - n 4 - electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain - s ource breakdown voltage bvdss id =- 25 0 a , vgs = 0v -3 0 v zero g ate voltage drain current idss vds =- 24 v, vgs = 0v -1 a vds =- 2 0 v, vgs = 0v, t a = 12 5 c -10 gate - b ody leakage current ig s s vds = 0v , vgs = 20 v 100 n a gate t hreshold voltage vg s( th) vds = vgs , id =- 25 0 a -0.9 -1.5 -3.0 v on s tate drain current i d ( on ) vgs =- 10 v, vds =- 5v -30 a 1 static drain - s ource on - r esistance r d s (o n ) vgs =- 10 v, i d =- 6 a 40 50 m 1 vgs =-4. 5v, id = - 5 a 6 5 80 forward transconductance gfs vds =- 10 v, id =- 6 a 16 s 1 diode forward voltage vsd i f =- 1a, vgs = 0v -1.2 v 1 max. body - d iode continuous c urren is -2.1 a pulsed current ism -4 a 3 dynamic parameters input capacitance c iss vgs = 0v, vds =- 15 v, f = 1mh z 530 pf output capacitance c oss 135 pf reverse transfer capacitance c r ss 70 pf switching parameters total gate charge q g vgs =- 10 v, vds =- 15 v id = -6 a 10.0 14.0 nc 2 gate - s ource charge q gs 2.2 nc 2 gate - d rain charge q gd 2.0 nc 2 turn - o n delay time t d (on) vgs =- 10 v, vds =- 15 v id = - 1 a, r l = 1 , rgen = 6 5.7 ns 2 turn - o n rise t ime t r 10.0 ns 2 turn - o ff delay time t d ( of f ) 18.0 ns 2 turn - o ff fall t ime t f 5.0 ns 2 body diode reverse recovery time t rr i f = -5 a, d if /dt=100a/ s 15.5 ns body diode reverse recovery charge qrr i f = -5 a, d if /dt=100a/ s 7.9 nc dual p-channel mosfet note : 1. pulsed width 300 sec and duty cycle 2%. 2. independent of operating temperature . 3. pulsed width limited by maximum junction temperature. 4 . duty cycle 1 %. t a = 25 c . u nless otherwise noted.
3 elm34801aa - n 4 - typical electrical and thermal characteristics dual p - channel logic level enhancement mode field effect transistor p06b03lv g sop - 8 lead free niko - sem 3 may - 0 4 - 200 5 dual p-channel mosfet
4 elm34801aa - n 4 - dual p - channel logic level enhancement mode field effect transistor p06b03lv g sop - 8 lead free niko - sem 4 may - 0 4 - 200 5 dual p-channel mosfet
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